smd type transistors 2SD1999 features low saturation voltage. contains diode between collector and emitter. contains bias resistance between base and emitter. large current capacity. small-sized package making it easy to provide highdensity, small-sized hybrid ics. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6v collector current i c 4a collector current (pulse) i cp 6a collector dissipation p c 1.5 w jumction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = 20v , i e =0 1.0 a v ce =2v,i c =0.5a 70 v ce =2v,i c =3a 50 gain bandwidth product f t v ce =2v,i c = 0.5a 200 mhz output capacitance c ob v cb = 10v , f = 1mhz 45 pf collector-emitter saturation voltage v ce(sat) i c =3a,i b = 150ma 0.25 0.5 v base-emitter saturation voltage v be(sat) i c =3v,i b = 150ma 1.5 v collector-to-base breakdown voltage v (br)cbo i c = 10a , i e =0 25 v i c = 10a , r be = 25 v i c = 10ma , r be = 20 diode forward voltage v f i f = 0.5a 1.5 v base-emitter resistance r be 1.5 k collector-to-emitter breakdown voltage v (br)ceo dc current gain h fe marking marking dn sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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